Understanding field scattering in AlGaN/GaN heterostructure field-effect transistors

Strained-Si heterostructure field effect transistors

The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained with secondary ion mass spectroscopy, Ru...

Gate leakage current mechanisms in AlGaNÕGaN heterostructure field-effect transistors

Gate leakage currents in AlGaN/GaN heterostructure field-effect transistor ~HFET! structures with conventional and polarization-enhanced barriers have been studied. Comparisons of extensive gate leakage current measurements with two-dimensional simulations show that vertical tunneling is the dominant mechanism for gate leakage current in the standard-barrier HFET and that the enhanced-barrier s...

Quantum mechanical solver for confined heterostructure tunnel field - effect transistors

Submitted for the MAR14 Meeting of The American Physical Society Quantum mechanical solver for confined heterostructure tunnel field-effect transistors DEVIN VERRECK, imec, KU Leuven, MAARTEN VAN DE PUT, BART SOREE, imec, Universiteit Antwerpen, ANNE VERHULST, imec, WIM MAGNUS, imec, Universiteit Antwerpen, WILLIAM VANDENBERGHE, University of Texas at Dallas, GUIDO GROESENEKEN, imec, KU Leuven ...

Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

Chapter 2 . Physics of InAIAs / InGaAs Heterostructure Field - Effect Transistors

The goal of this project is to develop InAIAs/InGaAs heterostructure field-effect transistors suitable for millimeter-wave high-power applications. The suitability of this material system for low-noise amplification is now unquestionable. Obtaining a high breakdown voltage is, however, still rather difficult, and it usually comes with severe trade offs. This fact seriously limits the suitabilit...